Estudo das propriedades eletrônicas e ópticas em semicondutores magnéticos diluídos (SMDs) do grupo III-V baseados em arsenetos

Abstract

Since the discovery of the Giant Magnetoresistance (GMR) phenomenon in the 80 years, there was a great advance in the electronic and optical properties in magnetic materials. The idea of using magnetic nanostructures to manipulate the spin of carriers for storage and reading information has given rise to a new area: the spintronics. From this, scientists has been studying the use of Diluted Magnetic Semiconductors (DMS) to obtain these properties in eletronic devices. The use of Mn doped alloys of group III-V showed very promising, mainly due experimental systems with high Curie temperature (TC). In this work we study the optical and electronic characteristics of DMSs based on group III-V, where we analyzed p-type doped quantum wells composed by AlGaAs=(n InAlGaAs=InAlGaAs : TM) and InAlAs=InGaAs=InAs : TM, where TM is the transition metal. For this, we use the~k ~p method to calculate the band structure within the 6 6 Luttinger-Kohn and 8 8 Kane formalisms. The calculations are solved by self-consistently solving both the Poisson equation and the multiband Effective Mass Equation. From this method, spins charge densities, total polarizations, electronic transitions energies and theoretical photoluminescence spectra were studied, as well as, the variation of these quantities with several parameters, such as magnetic and non magnetic layers widths, the number of magnetic layers, among others. These results are important for the development of new spintronic devices.